Work

Study of the effect of etching under the source/drain area on the DC characteristics of GaN HEMTs

Year: 2025

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/ae09d5

Authors: Yanxu Zhu, Xiaolong Yang, Yuhan Wang, Huimin Sun

Institution: Beijing University of Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Beijing University of Technology

OpenAlex ID: W4414396780

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Cites: 32

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