Work

Single-Event Latch-Up Characteristics of 16-nm FinFET SRAM-Based Field-Programmable Gate Array Under Single-Photon Absorption Laser Testing

Year: 2025

Type: article

Source: IEEE Transactions on Instrumentation and Measurement

DOI: 10.1109/tim.2025.3612557

Authors: Mushen Shen, Lei Chen, Wei Zhou, Liang Zhou, Huabo Sun, Fan Zhang

Institutions: Northwestern Polytechnical University, Beijing Microelectronics Technology Institute

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G7009689543

OpenAlex ID: W4414404925

FWCI: 0.231

Cites: 20

Cited by: 1

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