Work

Effect of Gate Bias and Channel Length on Total Dose Effect in FinFET Bulk Silicon Devices

Year: 2025

Type: conference-paper

Source: International Symposium on Advances in Electrical, Electronics and Computer Engineering (ISAEECE)

DOI: 10.1109/isaeece66033.2025.11159638

Authors: Xiaodong Zhao, Fan Yang, Xunying Zhang, Hongxia Wang, Yuanyuan Cui

Institution: Northwestern Polytechnical University

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

OpenAlex ID: W4414405952

FWCI:

Cites: 11

Cited by:

Related to: