Work

Recent Advancements in N-polar GaN HEMT Technology

Year: 2025

Type: article

Abstract: N-polar GaN HEMT technology has emerged as a disruptive technology that outperforms Ga-polar GaN HEMTs in terms of high-frequency power amplification capability. In this paper, the authors present a comprehensive review of the evolution of N-polar GaN HEMT technology from the perspective of crystal growth, dielectrics, and metals on N-polar GaN, transistor design, and performance. Specifically, the authors discuss the progress of the N-polar GaN HEMTs toward high-frequency, high-power, and high-efficiency applications with recent record-level performances, demonstrated by the authors, at mmWave frequencies.

Source: Crystals

DOI: 10.3390/cryst15090830