Effects of nitrogen passivation on the capture cross section energy distribution of 4H-SiC/SiO2 interface defects and the temperature dependences of leakage current
Year: 2025
Type: article
Source: Applied Physics Letters
DOI: 10.1063/5.0285027
Authors: Wende Huang, Peng Dong, Nuoya Yang, Yao Ma, Qian Xu, ChengWen Fu, Mingmin Huang, Yun Li, Zhimei Yang, Min Gong, Dongguo He, Qiuming He
Institutions: Sichuan University, China Academy of Engineering Physics
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4414408631