Work

Analysis of the capacitance of a vertical-junction photocell under polychromatic illumination: Influence of temperature and depth

Year: 2025

Type: article

Abstract: This study analyses the capacitance of a series-connected silicon vertical-junction photocell exposed to polychromatic illumination, by incorporating the influence of temperature and depth. Based on the diffusion and recombination model of minority carriers in the cell base, the continuity equation is solved while accounting for the temperature dependence of the diffusion length, carrier lifetime and photovoltage. The simultaneous study of depth and temperature provides a better understanding of the capacitive behaviour under real conditions, with the aim of optimizing the energy efficiency of photovoltaic cells.

Source: World Journal of Advanced Research and Reviews

DOI: 10.30574/wjarr.2025.27.3.3242

Authors: Mamadou Yacine Ba, Ibrahima kama, Mountaga Boiro, Amadou Diao

Institution: Cheikh Anta Diop University

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: hybrid

OpenAlex ID: W4414415756