High‐Efficiency InGaAsP Photovoltaic Devices for Optical Wireless Power Transmission in the 1.06 μm Range
Year: 2025
Type: article
Abstract: Herein, InGaAsP photovoltaic devices are fabricated for 1.06 μm band optical wireless power transmission. The fabrication process incorporates multi‐junctions through the introduction of tunnel junctions, an increase in the thickness of the surface electrode, and an outer circular electrode. The epitaxial layers are grown via the metal–organic vapor‐phase epitaxy method. Multi‐junctions are realized via the utilization of Type II tunnel junctions. Results show that an increase in the thickness of the photoresist results in the fabrication of a thicker electrode. The implementation of an outer circular electrode results in a maximum power conversion efficiency that exceeds 44% at a laser irradiation intensity of 1.5 W cm −2 .
Source: physica status solidi (a)
Authors: Takaya Oshimo, Yuga Motomura, Kotona Tabata, Takeru Yamada, Sho Aonuki, Natsuha Ochiai, Yukiko Suzuki, Kazuto Kashiwakura, Yohei Toriumi, Madoka Takahashi, Junichi Suzuki, Reo Aoyama, Shiro Uchida, Kouichi Akahane, Kensuke Nishioka, Meita Asami, Masakazu Arai
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4414427800