Work

Enhancement-Mode GaN Monolithic Bidirectional Switch With Integrated Gate Driver for High Temperature Application

Year: 2025

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2025.3613528

Authors: Yunsong Xu, Ang Li, Fan Li, Guohao Yu, Zhongming Zeng, Baoshun Zhang, Jiangmin Gu, Wen Liu

Institutions: Xi’an Jiaotong-Liverpool University, University of Science and Technology of China

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4414431936

FWCI: 3.554

Cites: 23

Cited by: 11

Related to: