Large Capacitive Memory Window Achieved in Ferroelectric HZO Capacitor With NbO x Insertion Layer for Non-Destructive Read
Year: 2025
Type: article
Source: IEEE Electron Device Letters
Authors: Zi-Ying Huang, Hong-Yan Zhu, Lei Shen, Xiao-Xu Li, Zhan-Yuan Huang, Yu-Chun Li, Ming Li, Ru Huang, David Wei Zhang, Hong-Liang Lu
Institutions: Fudan University, Peking University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4414432093