Work

Oxide Memristor of Ag/Ag + Doped V 2 O 5 and SnO 2 Bilayer Thin Film for Energy Efficient Memory, Logic and Neuromorphic Device Application

Year: 2025

Type: article

Source: Advanced Functional Materials

DOI: 10.1002/adfm.202514732

Authors: Subarna Pramanik, Rajarshi Chakraborty, Pushpendra Prakash Maurya, Swati Suman, Parasuraman Swaminathan, Bhola Nath Pal

Institutions: Indian Institute of Technology BHU, Banaras Hindu University, Indian Institute of Technology Madras

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Science and Engineering Research Board

Award: G2895799912

OpenAlex ID: W4414435577

FWCI: 2.309

Cites: 48

Cited by: 10

Related to: