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Influence of dopant concentration on the phase stability and magnetism of diluted magnetic semiconductors

Year: 2025

Type: article

Abstract: This study investigates how dopant concentration influences phase stability and magnetic behavior in diluted magnetic semiconductors (DMS). Using a series of metal-chalcogenide and oxide host matrices doped with transition-metal ions (Mn, Co, and Fe) across a wide concentration range (0.5-15 at.%), we combined controlled synthesis (solid-state reaction and pulsed-laser deposition), structural characterization (X-ray diffraction, transmission electron microscopy), chemical/valence analysis (XPS, EELS), and magnetic/electronic measurements (SQUID magnetometry, Hall effect, and temperature-dependent resistivity). We find a clear concentration-dependent evolution: at low dopant levels (

Source: International Journal of Physics and Applications

DOI: 10.33545/26647575.2025.v7.i2b.184

Authors: Veerendra Kumar, Sundar Singh

Language: English

Topic: Magnetic and transport properties of perovskites and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W4414440556

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