Work

1.5 kV NiO/Ga 2 O 3 Vertical Heterojunction Diodes Based on Lightly Doped Single‐Crystal Substrate with In Situ Ohmic Contact Formation

Year: 2025

Type: article

Source: physica status solidi (RRL) - Rapid Research Letters

DOI: 10.1002/pssr.202500293

Authors: Chang Liu, Ningtao Liu, Zefeng Wang, Yan Tan, Haobo Lin, Ning Xia, Jianqun Yang, Xingji Li, Jichun Ye, Wenrui Zhang

Institutions: Chinese Academy of Sciences, University of Chinese Academy of Sciences, Ningbo Institute of Industrial Technology, Yongjiang Laboratory, Harbin Institute of Technology

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G2120872872

OpenAlex ID: W4414452323

FWCI: 0.489

Cites: 38

Cited by: 3

Related to: