Work

Epitaxial growth and characterization of MnSb/InSb heterostructures on GaAs (111) B using molecular beam epitaxy

Year: 2025

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/ae0adf

Authors: Md Faysal Kabir, Md Tauhidul Islam, Soh Komatsu, Masashi Akabori

Institution: Japan Advanced Institute of Science and Technology

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414460969

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Cites: 30

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