Work

Scalable-manufactured erbium-doped silicon nitride amplifiers with high output power

Year: 2025

Type: conference-paper

Abstract: We demonstrate a wafer-scale manufactured photonic integrated circuit-based erbium-doped silicon nitride amplifier achieving record-high output power as high as 180 mW (fiber-coupled) and 241 mW (on-chip) at 1560 nm wavelength.

DOI: 10.1364/cleo_si.2025.ss166_2

Authors: Zheru Qiu, Xuan Yang, Xinru Ji, Yang Liu, Grigory Lihachev, Jianqi Hu, Tobias Kippenberg

Institution: École Polytechnique Fédérale de Lausanne

Language: English

Topic: Photonic and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W4414461432

FWCI:

Cites: 3

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