Erbium-doped/erbium-ytterbium co-doped waveguide amplifiers in silicon-based optoelectronics: recent progress
Year: 2025
Type: article
Abstract: Erbium-doped/erbium-ytterbium co-doped waveguide amplifiers (EDWAs/EYCDWAs) have received much attention as essential components within large-scale functionalized silicon-based optoelectronic (SBO) chips for their remarkable ability to amplify optical signals on-chip at the communication band combined with their potential application across diverse fields. We reviewed the research progress of EDWAs/EYCDWAs comprehensively. In particular, the research advancements concerning amplifiers constructed with diverse host materials are introduced in detail, and the gain limitations of the waveguide amplifiers are thoroughly analyzed from multiple perspectives, such as host materials and innovative structural designs. Subsequently, the preparation processes of the gain medium and waveguide structure in EDWAs/EYCDWAs are discussed, and their common application scenarios and commercial applications are summarized. In addition, an assessment is carried out on the challenges encountered by EDWAs/EYCDWAs. Finally, a discussion is held on their potential applications and development prospects in the field of SBO chips, with the aspiration of providing valuable references for the development of EDWAs/EYCDWAs.
Source: Advanced Photonics
Authors: Xiwen He, Zheng Zhang, Deyue Ma, Chen Zhou, Huihuang Hou, Youqiang Shuai, Jiqiao Liu, Rongping Wang, Zhiping Zhou, Weibiao Chen
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4414461522