Work

Stable high-temperature operation of E/D-mode tri-gate AlGaN/GaN MIS-HEMTs with digital recess technique for monolithic integration

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0282818

Authors: Weisheng Wang, Ang Li, Xuanming Zhang, Yunsong Xu, Zhiwei Sun, Fan Li, Yuanlei Zhang, Ye Liang, Harm Van Zalinge, Ivona Z. Mitrovic, Wen Liu

Institutions: University of Liverpool, Shanghai Zhangjiang Laboratory, Zhangjiang Laboratory, Xi’an Jiaotong-Liverpool University, Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G3993252122

OpenAlex ID: W4414471940

FWCI: 0.969

Cites: 33

Cited by: 3

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