Work

SiNx RRAMs performance with different stoichiometries

Year: 2025

Type: article

Abstract: Modifying the [N]/[Si] ratio of SiNx thin films by adjusting the gas flow rates during LPCVD deposition can enable performance tuning of the resulting MIS RRAM devices. This is confirmed by the DC electrical characterization, impedance spectroscopy and constant voltage stress measurements that were carried out. The average SET time for each device while applying voltage ramps is also calculated.

Source: Solid-State Electronics

DOI: 10.1016/j.sse.2025.109252

Authors: A.E. Mavropoulis, G. Pissanos, N. Vasileiadis, P. Normand, G.Ch. Sirakoulis, P. Dimitrakis

Institutions: Democritus University of Thrace, National Centre of Scientific Research "Demokritos", Institute of Nanoscience and Nanotechnology

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $2,410

Funder: Hellenic Foundation for Research and Innovation