A Novel Embedded p‐GaN Resistor Design in p‐GaN Gate AlGaN/GaN High‐Electron‐Mobility Transistors for Enhanced Performance
Year: 2025
Type: article
Source: physica status solidi (a)
Authors: Yue‐Ming Hsin, Yi‐Cheng Tseng, Chen‐Hao Wu, Yi‐Wan Wang, Jui‐Yi Yan
Institution: National Central University
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4414485560