Work

The leakage current suppression mechanism in a RuO 2 /SrTiO 3 /Ru capacitor induced by introduction of an ultra-thin GeO 2 interfacial layer at the bottom interface

Year: 2025

Type: article

Source: Journal of Materials Chemistry C

DOI: 10.1039/d5tc02736e

Authors: Heewon Paik, Dohyun Kim, Junil Lim, Haengha Seo, Tae Kyun Kim, Jong Hoon Shin, Haewon Song, Hansub Yoon, Dae Seon Kwon, Dong Gun Kim, Jung-Hae Choi, Cheol Seong Hwang

Institutions: Seoul National University, Korea Institute of Science and Technology, Sookmyung Women's University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Research Foundation of Korea

Award: G7208142174

OpenAlex ID: W4414485830

FWCI:

Cites: 38

Cited by:

Related to: