Work

Field‐Induced Structural Dynamics of Polarization Switching in Hf x Zr 1‐x O 2 Thin Films

Year: 2025

Type: article

Source: Advanced Materials

DOI: 10.1002/adma.202510930

Authors: Sangjun Lee, Sunghyun Kim, Seong Yong Park, Donghyun Kim, Su Yong Lee, Daseul Ham, Hyun Hwi Lee, Dongjin Yun, Seontae Park, Soohwan Sul, Seungjin Kang, Geonu Kim, Duk‐Hyun Choe, Jooho Lee, Beomseok Kim, Jinseong Heo, Hyung‐Suk Jung, Hanjin Lim, Wonsik Choi, Jeong‐Gyu Song

Institutions: Pohang University of Science and Technology, Pohang Accelerator Laboratory, Samsung Advanced Institute of Technology (South Korea), Samsung Electronics (South Korea), Samsung (South Korea)

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414490364

FWCI: 0.902

Cites: 58

Cited by: 4

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