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Low‐Voltage Driven High‐Speed and Low‐Energy Memory Operations by Novel TiTe 2 /Sc 0.3 Sb 2 Te 3 Phase‐Change Heterostructure

Year: 2025

Type: article

Source: Small

DOI: 10.1002/smll.202505264

Authors: Mingjian Zhong, Yonghui Zheng, Yongyong Che, Yuanpei Gan, Qianqian Qin, Xue‐Peng Wang, Keyuan Ding, Yan Cheng, Feng Rao

Institutions: Shenzhen University, East China Normal University

Language: English

Topic: Phase-change materials and chalcogenides

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funders: Science and Technology Foundation of Shenzhen City, National Natural Science Foundation of China, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G1145962653, G2684338051, G3165940884, G402679026, G4942001990, G4977351303, G507764749, G5406030946, G6395324369, G7211092718, G8168308395, G928037795

OpenAlex ID: W4414518213

FWCI: 0.416

Cites: 44

Cited by: 2

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