Work

1.5-kV blocking vertical AgO x /β-Ga2O3 Schottky barrier diodes with ultralow leakage current and over 1013 rectification ratio

Year: 2025

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/ae0b82

Authors: Xiaole Jia, Zheyuan Hu, Yibo Wang, Cizhe Fang, Hongrui Zhang, Haodong Hu, Bochang Li, Yan Liu, Yue Hao, Genquan Han

Institutions: Xidian University, Chinese Academy of Sciences, Suzhou Institute of Nano-tech and Nano-bionics

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G2565780995

OpenAlex ID: W4414531332

FWCI: 0.163

Cites: 38

Cited by: 1

Related to: