Work

The impacts of variable Ag doping content on the characteristics of p-Ag x :NiO/n-Si heterojunction diodes

Year: 2025

Type: article

Source: Journal of Physics D Applied Physics

DOI: 10.1088/1361-6463/ae0b7e

Authors: Jun-Dar Hwang, Shun-Chih Hsieh

Institution: National Chiayi University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Science and Technology Council

OpenAlex ID: W4414532533

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Cites: 56

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