Work

Electro–Thermal Coupling Characteristics of GaN SBDs Under HPM Pulses: Effect of Dislocation Density and Deep Learning Predictive Model

Year: 2025

Type: article

Source: IEEE Transactions on Power Electronics

DOI: 10.1109/tpel.2025.3614847

Authors: Peiran Liu, Dawei Liu, Shixiong Liang, Yining Cheng, Xiao Li, Yingwei Chen, Donglin Su

Institutions: Beihang University, Tianjin University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G2140147152

OpenAlex ID: W4414538296

FWCI: 0.969

Cites: 51

Cited by: 3

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