Work

A Reliable Single-Event Burnout Hardening Method for p-GaN HEMTs: Using Dual-Layer Buffer Structure

Year: 2025

Type: article

Source: IEEE Transactions on Nuclear Science

DOI: 10.1109/tns.2025.3614665

Authors: Hao Huang, Ying Wang, Huolin Huang, Xinxing Fei, Biao Sun, Yanxing Song, Fei Cao

Institutions: Dalian University of Technology, Dalian Maritime University

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Key Research and Development Program of China

Award: G4033929453

OpenAlex ID: W4414538437

FWCI: 0.227

Cites: 34

Cited by: 1

Related to: