Work

High Time-Resolution Transient Current-Based Characterization System for Traps in SiC MOSFET

Year: 2025

Type: article

Source: IEEE Transactions on Instrumentation and Measurement

DOI: 10.1109/tim.2025.3614851

Authors: Xianwei Meng, Chunsheng Guo, Yiming Hao, Shiwei Feng, Xiang Zheng, Yamin Zhang

Institutions: Beijing University of Technology, University of Bristol

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Beijing Municipal Commission of Education

Awards: G4264397532, 基于峰值谱技术的GaN基HEMT器件陷阱演化特征及物理机制研究, G6947546890, G6998826950

OpenAlex ID: W4414538797

FWCI: 0.693

Cites: 37

Cited by: 3

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