Work

MoS2-Based NC-TMDTFET for Drain Voltage and Temperature Variability Analysis

Year: 2025

Type: conference-paper

Source: IEEE Guwahati Subsection Conference (GCON)

DOI: 10.1109/gcon65540.2025.11173355

Author: Basab Das

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4414539606

FWCI: 2.358

Cites: 22

Cited by: 1

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