Year: 2025
Type: article
Abstract: The energy deposition process for the main components of SIC Schottky diodes is simulated based on Geant4. Particle bombardment results were simulated under different angles, target materials and doping concentrations on the same target material for different light particles and heavy ions, and then the Linear Energy Transfer of SiC materials and external conditions that affect LET are obtained. The results show that the LET value of protons exhibits significant oscillations at low energy incidence, gradually decreasing exponentially after 10−1 MeV. Alpha particles have a LET peak near 1 MeV, while beta particles show an exponential decrease. The LET values at low energy levels increase exponentially, while at high energy levels, the LET values show a similar linear relationship with energy. For different incident angles, the average LET value of protons in the low-level region gradually increases as the incident angle increases. The average LET value of protons in the remaining energy ranges is less affected by angle; the incident angle has no significant effect on the LET distribution of alpha particles within the full spectrum range. The results provide important references for understanding the energy deposition process and LET distribution of silicon carbide devices under single-particle interaction.
Source: Micromachines
DOI: 10.3390/mi16101092
Authors: Jiamu Xiao, Heng Xie, Shougang Du, Shulong Wang, Tianlong Zhao, Hongxia Liu
Institution: Xidian University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,534
Award: G4170341743
OpenAlex ID: W4414554316