Work

Structural and electronic properties of hydrogen-terminated diamond field-effect transistors with h-BN gate dielectric featuring native point defects

Year: 2025

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0282593

Authors: Qingzhong Gui, Wei Yu, Chunmin Cheng, Taiqiao Liu, Xuhao Wan, Jinhao Su, Guoyou Liu, John Robertson, Sheng Liu, Zhaofu Zhang, Xin Yang, Yuzheng Guo

Institutions: Hunan University, Wuhan University, University of Cambridge

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G2174068169, G3028049876, G3670152389, G3958004537, G4301075527, G5586658670, G5615318597, G7356350458, G7780826871

OpenAlex ID: W4414561397

FWCI:

Cites: 50

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