Work

Band Alignment Engineering in β-Ga2O3/4H-SiC Polar Heterojunctions via Orientation Selection: Interfacial Band Edge States and Hole Trapping

Year: 2025

Type: article

Source: The Journal of Physical Chemistry Letters

DOI: 10.1021/acs.jpclett.5c02090

Authors: Jiaren Feng, Qingzhong Gui, Taiqiao Liu, Changshuai Yin, Fei Yang, Yihong Chen, Kelvin Hongliang Zhang, Xing Li, Feng Zhang, Guoqiang Wu, Yuzheng Guo, Sheng Liu, Zhaofu Zhang

Institutions: Wuhan University, Hunan University, State Grid Corporation of China (China), Xiamen University, Zhengzhou University, Suzhou Research Institute

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Wuhan University, Basic Research Program of Jiangsu Province, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G1456041692, G1865632032, G2897094334, G3670152389, G3958004537, G5586658670, G5615318597, G8086658290

OpenAlex ID: W4414564155

FWCI: 0.96

Cites: 56

Cited by: 6

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