Low losses optical devices on GaP/GaAs platform
Year: 2025
Type: conference-paper
Abstract: Here we study Gallium Phosphide-based devices made from GaP/GaAs epilayers in the framework of non-linear photonic integration. We demonstrate state-of-the art propagation losses in the near infrared and discuss this value in terms of roughness and crystal defects.
Source: Advanced Photonics Congress
Institutions: École Centrale de Lyon, Centre National de la Recherche Scientifique, Institut des Nanotechnologies de Lyon, Institut National des Sciences Appliquées de Rennes, Fonctions Optiques pour les Technologies de l’information, Université de Rennes, Université Paris-Saclay, Centre de Nanosciences et de Nanotechnologies
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
Funder: Agence Nationale de la Recherche
OpenAlex ID: W4414566807