Year: 2025
Type: article
Abstract: This work investigates the use of femtosecond laser processing to fabricate various nanocarbon structures with distinct electrical behaviors within diamond substrates. Conventional approaches for achieving diamond doping have significant disadvantages, including challenging growth profiles, limited environmental stability, and sub‐optimal psuedo‐vertical structures. Here, it is demonstrated that laser‐written nanocarbon networks (NCNs) directly alleviate these issues, demonstrating the highly repeatable fabrication of robust and precise electrical architectures buried in diamond with proven stability over repeated temperature and voltage cycling. By varying the laser pulse repetition rate (PRR), a transition from Ohmic conductive to semiconductive/ambipolar behavior is achieved in the modified diamond. Furthermore, a proof‐of‐concept, all‐carbon transistor architecture buried within the bulk diamond is presented, showcasing the potential for integrated device fabrication using the laser‐writing process.
Source: Advanced Electronic Materials
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $3,560
Awards: G115085052, Implementation of activities described in the Roadmap to Fusion during Horizon Europe through a joint programme of the members of the EUROfusion consortium, DTP 2224 University College London, G2293481551, DTP 2018-19 University College London, G3562821882, Diamond Devices for extreme applications, Multiscale multidimensional integrated imaging for precision laser processing (M2I2), G5172252545, G7564478775
OpenAlex ID: W4414573073