Work

Structural properties of ZnO films obtained on SiC/porous-Si by the method of high frequence magnetron sputtering

Year: 2025

Type: article

Abstract: The morphological and structural properties of ZnO thin films grown by RF magnetron sputtering using a SiC/porous-Si/Si template were studied. The preparation of the ZnO/SiC/porous-Si/Si heterostructure was carried out in two stages: deposition of SiC films by solid-phase epitaxy followed by the deposition of ZnO films by radio frequency magnetron sputtering. SiC buffer layers on the porous silicon substrate allow for the growth of ZnO films with low residual mechanical stress, measured at -82.3 MPa. A comparative analysis with data from other studies indicates the relatively high quality of the obtained structures. Keywords. zinc oxide (ZnO), silicon carbide (SiC), porous silicon (por-Si), scanning electron microscopy (SEM), X-ray diffraction (XRD)

Source: Physics and Chemistry of Solid State

DOI: 10.15330/pcss.26.3.699-704

Authors: A.S. Revenko, V.V. Kidalov, O.I. Gudymenko

Institutions: University College Dublin, TU Dortmund University, Dmytro Motornyi Tavria State Agrotechnological University, V.E. Lashkaryov Institute of Semiconductor Physics

Language: English

Topic: ZnO doping and properties

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: diamond

Funders: Science Foundation Ireland, Deutsche Forschungsgemeinschaft

Awards: G1400879241, DNA Amplification and Detection within a Confined Nanospace, G3611315278, Physikalische und technologische Grundlagen zur Gewinnung von ZnS:Mn Nanopulver, Metallopolymeren und Heterostrukturen auf Basis von nanoporösem Silizium