Work

RF characterization and gated-mode drive optimization of high-reverse-bias silicon APDs in the solar-blind ultraviolet band

Year: 2025

Type: article

Abstract: Silicon avalanche photodiodes (Si-APDs) operated in gated mode require high peak-to-peak voltages for effective avalanche triggering and lack of corresponding RF models. To address this, we propose a S-parameter measurement method for accurate RF characterization from 100 MHz to 13.6 GHz. Based on the extracted data, we design a matched amplifier network and propose an algorithm to calculate the voltage across the APD, achieving 42 V crossing the APD with only a 27.5dBm amplifier at 600 MHz. The 50 Ω-optimized design improves coupling efficiency, harmonic suppression capability, and reduces gating jitter to 1.7%. This provides technical support for reducing design costs and improving the stability of high-performance single-photon detection systems.

Source: Optics Express

DOI: 10.1364/oe.574255

Authors: Haoyun Zhao, Zilong Ou, Zongyao Shen, Zhengjun Wei, Jindong Wang, Jianping Guo

Institution: South China Normal University

Language: English

Topic: Advanced Semiconductor Detectors and Materials

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: gold

Estimated APC paid: $2,270

Funders: National Natural Science Foundation of China, Natural Science Foundation of Guangdong Province