Work

A 180-nm Voltage-Controlled Magneto-Electric RAM With Sub-1-ns Switching Time

Year: 2025

Type: article

Source: IEEE Journal of Solid-State Circuits

DOI: 10.1109/jssc.2025.3609342

Authors: Haris Suhail, Haoran He, Vinod Kurian Jacob, Jiyue Yang, Kang L. Wang, Sudhakar Pamarti

Institutions: Nvidia (United States), Taiwan Semiconductor Manufacturing Company (United States), University of California, Los Angeles

Language: English

Topic: Magnetic properties of thin films

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Air Force Research Laboratory

OpenAlex ID: W4414603283

FWCI: 1.841

Cites: 33

Cited by: 5

Related to: