Work

Thermal Dynamic of Single-Event Burnout in SiC Power MOSFETs

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3609714

Authors: Yiping Xiao, Chaoming Liu, Leshan Qiu, Mingzheng Wang, Tianqi Wang, Yun Bai, Mingxue Huo

Institutions: Harbin Institute of Technology, Chinese Academy of Sciences, Institute of Microelectronics

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G1693754126, G3464628322, G5955410122, G851891743, G8546819277

OpenAlex ID: W4414603879

FWCI: 1.138

Cites: 32

Cited by: 5

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