Work

Modulation Acceptor-Doping as an Alternative to Classical P-Type Impurity Doping for Silicon

Year: 2025

Type: article

Source: IEEE Transactions on Materials for Electron Devices

DOI: 10.1109/tmat.2025.3615888

Authors: Soundarya Nagarajan, Ingmar Ratschinski, Stefan Schmult, Thomas Mikolajick, Daniel Hiller, Jens Trommer

Institutions: NaMLab (Germany), TU Bergakademie Freiberg, Technische Universität Dresden

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Deutsche Forschungsgemeinschaft

Award: ModulationsAkzeptordotierung von SiO2 als neuartige Dotierungsmethode für Silicium Nanodrähte (MADSiNano)

OpenAlex ID: W4414604209

FWCI: 0.231

Cites: 23

Cited by: 1

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