Work

High-responsivity InSe/TaSe 2 photodetectors integrated on low-loss silicon nitride waveguides

Year: 2025

Type: article

Abstract: heterojunction exceeds that of the reference InSe-based photodetector by more than 50%. Additionally, when illuminated with laterally incident light through the waveguide, the photodetector exhibited significantly higher responsivity compared to the normal-incidence configuration, achieving approximately a 20-fold enhancement as a result of stronger light-matter interactions and the intrinsic properties of the heterostructure. These findings highlight the potential of on-chip heterojunction-based photodetectors for applications in sensing, imaging, and integrated communication systems.

Source: Nanoscale Advances

DOI: 10.1039/d5na00119f