Year: 2025
Type: article
Abstract: Engineering ferroelectric interfaces is key to improving device performance. Combining thin insulators with ferroelectrics is a promising approach for minimizing leakage currents and increasing the switching efficiency. In this work, we study the interface between atomic layer deposited amorphous Al2O3 and epitaxial BaTiO3 films. These materials constitute simple and robust examples of an insulator and a ferroelectric, respectively. We confirm the microstructure and interface chemistry of the heterostructure. X-ray photoelectron spectroscopy was employed to quantify the interfacial band offsets, yielding energy barriers of 1.3 eV for holes and 2.1 eV for electrons. These results highlight Al2O3 as a promising candidate for an insulating layer on ferroelectrics, paving the way for efficient insulator-ferroelectrics structures for ferroelectric functional devices.
Source: Journal of Applied Physics
DOI: 10.1063/5.0291033
Institution: Technion – Israel Institute of Technology
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,500
Awards: G1357397536, G8597192657
OpenAlex ID: W4414612623