Year: 2025
Type: article
Abstract: With the development of embedded electronic devices, energy consumption has become a significant design issue in modern systems-on-a-chip. Conventional SRAMs cannot maintain data after powering turned off, limiting their use in applications such as battery-powered smartphone devices that require non-volatility and no leakage current. RRAM devices are recently used extensively in applications such as self-charging wireless sensor networks and storage elements, owing to their intrinsic non-volatility and multi-bit capabilities, making them a potential candidate for mitigating the von Neumann bottleneck. We propose a new RRAM-based hybrid memristor model incorporated with a permanent magnet. The proposed design (1T2R) was simulated in Cadence Virtuoso with a 1.5 V power supply, and the finite-element approach was adopted to simulate magnetization. This model can retain the data after the power is off and provides fast power on/off transitions. It is possible to charge a smartphone battery without an external power source by utilizing a portable charger that uses magnetic induction to convert mechanical energy into electrical energy. In an embedded smartphone self-charging device this addresses eco-friendly concerns and lowers environmental effects. It would lead to the development of magnetic field-assisted embedded portable electronic devices and open the door to new types of energy harvesting for RRAM devices. Our proposed design and simulation results reveal that, under usual conditions, the magnet-based device provide a high voltage to charge a smartphone battery.
Source: Micromachines
DOI: 10.3390/mi16101101
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,534
Funder: Institut "Jožef Stefan"
OpenAlex ID: W4414615743