A multi-fin normally-off β-Ga2O3 vertical transistor with a breakdown voltage exceeding 10 kV
Year: 2025
Type: article
Abstract: We demonstrated a multi-fin normally-off β-Ga2O3 vertical transistor with a breakdown voltage exceeding 10 kV, a specific on-resistance of 289 mΩ·cm2, and a power figure-of-merit of 0.35 GW cm−2. The vertical transistor was fabricated on a low-donor-concentration (N d−N a ≈ 1.8 × 1015 cm−3) and thick (thickness ≈ 85 μm) epitaxial layer grown on a (011) β-Ga2O3 substrate by halide vapor phase epitaxy to enhance the breakdown voltage. The breakdown voltage exceeding 10 kV is the highest reported for β-Ga2O3 vertical transistors. This result indicates the great potential of Ga2O3 vertical power devices.
Source: Applied Physics Express
Institution: Novel Crystal Technology, Inc. (Japan)
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,365
OpenAlex ID: W4414630379