TCAD analysis of Si/SiGe superlattice channel in 2 nm gate-all-around FETs
Year: 2025
Type: article
Authors: Po-Ying Li, Shun-Jung Chaing, Yao-Hong Peng, Ching-Kai Tsai, Guo-Zhao Wu, Chia-Huai Ho
Institution: Feng Chia University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4414636939