Work

Impact of Interface Trap Densities on Mg2Si-Based Electrostatically Doped Tunnel FET

Year: 2025

Type: article

Source: Modelling and Simulation in Materials Science and Engineering

DOI: 10.1088/1361-651x/ae0daa

Authors: Bandi Venkata Chandan, Kaushal Nigam

Institution: National Institute of Technology Raipur

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414637941

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