Year: 2025
Type: article
Abstract: Crystalline phase transitions in two-dimensional (2D) materials enable precise control over electronic and ferroic properties, making them attractive materials for memory and energy storage applications. In 2 Se 3 is particularly promising because its α and β′ phases are both stable at room temperature but exhibit distinct ferroic behaviors. However, achieving reliable reversible switching between these states remains challenging. Here, we show that controlled β′ → α phase transitions in 2D In 2 Se 3 become accessible through laser-induced wrinkling, establishing a room-temperature approach for manipulating ferroic states in In 2 Se 3 thin films. Combined with thermal annealing for phase recovery, this approach eliminates cryogenic steps and mechanical perturbation while harnessing accumulated internal strain to generate multiphase heterostructures and direct domain reorganization. This pathway for phase transitions in In 2 Se 3 opens the door for further development in ferroic device architectures and phase-change memory technologies.
Source: Nano Letters
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
Funder: Basic Energy Sciences
Award: G5570816615
OpenAlex ID: W4414644839