Year: 2025
Type: article
Abstract: This is a review cum research communication in brief. A summary of the electrical properties of a metal-oxide-semiconductor (MOS) device on various semiconductors of Silicon, Silicon Carbide and Gallium Nitride is presented in the form of Table 1. The electrical properties for most of the devices in the summary have been published elsewhere and this brief mainly summarizes them so as to be able to compare the properties with one below the other in one view.
Author: Ravi Kumar Chanana
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4414652541
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