Construction of a fully transparent β-Ga2O3 multi-mode solar-blind detection experimental system based on back incidence technology
Year: 2025
Type: article
Abstract: To meet the urgent demand for high-performance photodetectors in emerging solar-blind ultraviolet communication applications, this study systematically designs and implements a fully transparent β-Ga2O3 solar-blind photodetector based on a back-illumination architecture. The device is fabricated using RF magnetron sputtering to epitaxially grow high-quality β-Ga2O3 films (~300 nm in thickness, ~4.98±0.05 eV in bandgap) on double-polished sapphire substrates, with indium tin oxide (ITO) interdigitated electrodes forming efficient quasi-Ohmic contacts with n-type Ga2O3. The core advantage of this design lies in exploiting the high deep-UV transmittance of double-polished sapphire substrates, enabling incident photons to completely bypass the UV-absorbing ITO electrodes and eliminate photon loss caused by electrode shadowing effects in traditional front-illumination configurations. Consequently, the device demonstrates exceptional optoelectronic performance: a maximum responsivity of 0.46 A/W corresponding to an external quantum efficiency of 222.4%, an outstanding UV/visible rejection ratio of 1.2×104, a minimum noise equivalent power of 1.52 pW/Hz1/2, and a peak specific detectivity of 1.39×1011 Jones, with fast response times of 24 μs (rise) and 1.24 ms (decay). Building on this high-performance detector platform, we further explore its multifunctional application potential by constructing a polarization detection system that utilizes the intrinsic lattice anisotropy of monoclinic β-Ga2O3, and successfully demonstrating a non-line-of-sight (NLOS) UV communication system that validates high-fidelity information transmission in complex scattering channels. This work provides effective physical insights and experimental basis for developing next-generation Ga2O3-based optoelectronic devices with integrated high sensitivity, polarization resolution, and NLOS communication capabilities, showing promising applications in secure communications and polarization imaging.
Source: Acta Physica Sinica
Authors: Dianmeng DONG, Jingchen WANG, Xiaoyun XU, Min PENG, Zechuan WANG, Cheng WANG, Zhenping WU
Language: English
Topic: Ga2O3 and related materials
Field: Materials Science
Domain: Physical Sciences
Open Access status: diamond
Awards: G2087077881, G8924576164
OpenAlex ID: W4414670320
