One‐Step Laser‐Induced Oxidation and Doping for Tailored p‐Type Conversion of Al‐Doped TiO2 (Small 39/2025)
Year: 2025
Type: article
Abstract: Metal Oxide Semiconductors A laser-assisted oxidation and doping strategy enables one-step formation of Al-doped TiO2, achieving p-type conductivity through selective Al diffusion above the threshold laser power. This method overcomes the intrinsic n-type nature of TiO2, offering a CMOS-compatible route for type conversion. The approach provides precise spatial control, enhanced hole transport, and scalability for next-generation oxide electronics and 3D integration. More in article number 2502139, Hyuk-Jun Kwon and co-workers.
Source: Small
DOI: 10.1002/smll.70300
Authors: Gyuwon Yang, Junil Kim, Byeongmoon Lee, Jae Eun Jang, Hyuk‐Jun Kwon
Institution: Daegu Gyeongbuk Institute of Science and Technology
Language: English
Field: Energy
Domain: Physical Sciences
Open Access status: bronze
OpenAlex ID: W4414750968