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Dislocation behavior near the seeding interface in <110>-oriented Czochralski-Si single crystals

Year: 2025

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/ae0e7c

Authors: Hisashi Matsumura, Hiroyuki Saito, Rintaro To, Hiroki Tsukada, Shoma Tsukada, Takeshi Hoshikawa, Toshinori Taishi

Institution: Shinshu University

Language: English

Topic: Silicon and Solar Cell Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4414763948

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Cites: 24

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