Work

Heterogenous Integration of Boron-Doped p -Diamond with Monolayer n -MoS 2 for P N Junctions Operating at Room Temperature

Year: 2025

Type: article

Source: Nano Letters

DOI: 10.1021/acs.nanolett.5c04059

Authors: Akshay Wali, Roshan Padhan, Ralu Divan, Liliana Stan, Nihar Pradhan, Anirudha V. Sumant

Institutions: Argonne National Laboratory, Center for Nanoscale Materials, Jackson State University

Language: English

Topic: 2D Materials and Applications

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: Office of Science, Basic Energy Sciences

Awards: HETEROGENEOUS INTEGRATION OF 2D-3D MATERIALS FOR ENERGY EFFICIENT ELECTRONICS, G426311843

OpenAlex ID: W4414787808

FWCI: 0.631

Cites: 53

Cited by: 3

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