Work

A 9T SRAM Computation-in-Memory Architecture With High-Precision MAC, Enhanced Bitline Voltage Margin, and Improved Frequency Performance Over Conventional Architectures

Year: 2025

Type: article

Source: IEEE Transactions on Very Large Scale Integration (VLSI) Systems

DOI: 10.1109/tvlsi.2025.3613056

Authors: Hongbiao Wu, Zhitin Lin

Institution: Anhui University

Language: English

Topic: Advanced Memory and Neural Computing

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G6824512897, G7045866682, G7486237554

OpenAlex ID: W4414788000

FWCI: 0.455

Cites: 36

Cited by: 2

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